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| 型号 | PHD97NQ03LT,118 |
| 厂商 | NXP Semiconductors |
| 描述 | MOSFET N-CH TRENCH 25V SOT428 |
| PHD97NQ03LT,118 PDF |  |
| 代理商 | PHD97NQ03LT,118 |
| 标准包装 | 2,500 |
| 系列 | TrenchMOS™ |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 25V |
| 电流 - 连续漏极(Id) @ 25° C | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 6.3 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大） | 2.15V @ 1mA |
| 闸电荷(Qg) @ Vgs | 11.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds | 1570pF @ 12V |
| 功率 - 最大 | 107W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装 | D-Pak |
| 包装 | 带卷 (TR) |
| 其它名称 | 934061139118 |
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